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Silicon Carbide Wafers

Silicon Carbide(SiC) Wafer is a compound semiconductor material composed of silicon and carbon, which is very stable in thermal, chemical and mechanical aspects. The different combination of C atom and Si atom makes SiC have many kinds of lattice structures, such as 4h, 6h, 3C and so on. Because of high carrier mobility and high current density of Silicon Carbide material, 4H SiC is often used as power devices. Found in 1990,Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

In 2004,PAM-XIAMEN has developed silicon carbide crystal growth technology and silicon carbide wafers processing technology, established a production line to manufacturer silicon carbide substrate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers, Which is applied in GaN epitaxy device, power devices, high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab, we are devoted to continuously improve the quality of currently substrates and develop large size substrates, as well as epitaxial technology.

Now PAM-XIAMEN offer wide silicon carbide wafers&ingots,including as cut wafers , lapping wafers , polished wafers , sic ingots with n type and semi-insulating.

GaN substrate --Germanium Wafer