XIAMEN POWERWAY ADVANCED MATERIAL
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Silicon Carbide Substrate...
6H Silicon Carbide
4H Silicon Carbide
N Type Silicon Carbide
Semi-insulating Silicon Carbide
As Cut Wafer
Lapping Wafer
Polishing Wafer
Transparent SiC
Dummy Wafer
Reclaim Wafer
SiC Epitaxial Wafers
Wafer Reclaim Service
Wafer Planarization
Wafer Reclaim
Company Name: XIAMEN POWERWAY ADVANCED MATERIAL
Tel: +86-592-5601404
Fax: +86-592-5563272
E-Mail:
sic@powerwaywafer.com
Address: #506B, Henghui Business Center,No.77,Lingxia Nan Road, High Technology Zone, Huli, Xiamen,361006
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3.Definitions of Silicon Carbide Epitaxy
3-1. Large Point Defects
3-2. Scratches
3-3. Dimpling
3-4. Step Bunching
3-5. Backside Cleanliness
3-6. Edge Chips
3-7. ID Correct and Major Wafer Flat
3-8. 3C Inclusions
3-9. Comet Tails
3-10. Carrots
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