6H Semi-insulating SiC - Can't Offer Temporarily
Model NO.:intanetcms000044
FEATURE
PAM-XIAMEN offers 6H Semi-insulating silicon carbide wafers. --Can't Offer Temporarily*
* Due to the rapid changes in the semiconductor wafer market and our production lines, our supply capacity will change with it, but the changes will not be shown on our website. So we reserve the right to explain all the information on our website.
| SILICON CARBIDE MATERIAL PROPERTIES | |||
| Polytype | Single Crystal 4H | Single Crystal 6H | |
| Lattice Parameters | a=3.076 Å | a=3.073 Å | |
| c=10.053 Å | c=15.117 Å | ||
| Stacking Sequence | ABCB | ABCACB | |
| Band-gap | 3.26 eV | 3.03 eV | |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 | |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K | |
| Refraction Index | no = 2.719 | no = 2.707 | |
| ne = 2.777 | ne = 2.755 | ||
| Dielectric Constant | 9.6 | 9.66 | |
| Thermal Conductivity | 490 W/mK | 490 W/mK | |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m | |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s | |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S | |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S | |
| Mohs Hardness | ~9 | ~9 | |
| 6H SIC,SEMI-INSULATING , 2″WAFER SPECIFICATION | |||
| SUBSTRATE PROPERTY | S6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430 | ||
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 6H SEMI Substrate | ||
| Polytype | 6H | ||
| Diameter | (50.8 ± 0.38) mm | ||
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm | ||
| Resistivity (RT) | >1E5 Ω·cm | ||
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | ||
| FWHM | A<30 arcsec B/C/D <50 arcsec | ||
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | ||
| Surface Orientation | |||
| On axis | <0001>± 0.5° | ||
| Off axis | 3.5° toward <11-20>± 0.5° | ||
| Primary flat orientation | Parallel {1-100} ± 5° | ||
| Primary flat length | 16.00 ± 1.70 mm | ||
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | ||
| C-face:90° ccw. from orientation flat ± 5° | |||
| Secondary flat length | 8.00 ± 1.70 mm | ||
| Surface Finish | Single or double face polished | ||
| Packaging | Single wafer box or multi wafer box | ||
| Usable area | ≥ 90 % | ||
| Edge exclusion | 1 mm | ||
| 6H Semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm | |||
| 6H Semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm | |||
| a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below: | |||
| 6H Semi-insulating | Thickness:330μm/430μm or custom | ||
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