Company Name: XIAMEN POWERWAY ADVANCED MATERIAL
Tel: +86-592-5601404
Fax: +86-592-5563272
E-Mail: sic@powerwaywafer.com

Address: #506B, Henghui Business Center,No.77,Lingxia Nan Road, High Technology Zone, Huli, Xiamen,361006
Home > News > A Thermodynamic Mechanism for PVT Growth Phenomena of SiC Single Crystals
A Thermodynamic Mechanism for PVT Growth Phenomena of SiC Single Crystals

 Sublimation-recrystallization phenomena occurring during the PVT growth of SiC single crystals are examined from the viewpoint of quasi-equilibrium phase transition using pressure-dependent Si-Cbinary phase diagrams. From the results obtained, it is concluded that a thermodynamic interpretation for the PVT growth is consistently possible; the PVT process for SiC is comprised of a combination of elemental reactions driven by transition between phases at the growth temperatures. In addition, various phenomena observed during the PVT growth, such as silicon droplet formation, in-situ etching, and hexagonal void movement, are also discussed based upon the phase diagram, and possible mechanisms for these phenomena are proposed.

source: iopscience

 

For more information, please visit our website: http://www.siliconcarbidewafer.com,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com