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Home > News > Characteristics of 4H-SiC RF MOSFETs on a Semi-Insualting Substrate
Characteristics of 4H-SiC RF MOSFETs on a Semi-Insualting Substrate

 This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

 

source: iopscience

 

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