Lapping Wafer
Model NO.:intanetcms000048FEATURE
PAM-XIAMEN offers lapped silicon carbide wafers, As-cut wafers are lapped and cleaned to be qualified as lapped wafers.
Lapping process can reduce surface roughness and mechanical defects from as-cut wafers and can further improve geometrical performance
4" 4H Silicon Carbide | |||||||
Item No. | Type | Orientation | Thickness | Grade | Micropipe Density | Surface | Usable area |
N-Type | |||||||
S4H-100-N-SIC-370-L | 4" 4H-N | 0°/4°±0.5° | 370±25um | D | * | L/L | >75% |
3" 4H Silicon Carbide | |||||||
Item No. | Type | Orientation | Thickness | Grade | Micropipe Density | Surface | Usable area |
N-Type | |||||||
S4H-76-N-SIC-370-L | 3" 4H-N | 0°/4°±0.5° | 370±25um | D | * | L/L | >75% |
2" 4H Silicon Carbide | |||||||
Item No. | Type | Orientation | Thickness | Grade | Micropipe Density | Surface | Usable area |
N-Type | |||||||
S4H-51-N-SIC-370-L | 2" 4H-N | 0°/4°±0.5° | 370±25um | D | * | L/L | >75% |
2" 6H Silicon Carbide | |||||||
Item No. | Type | Orientation | Thickness | Grade | Micropipe Density | Surface | Usable area |
N-Type | |||||||
S6H-51-N-SIC-370-L | 2" 6H-N | 0°/4°±0.5° | 370±25um | D | * | L/L | >75% |
SEMI-INSULATING | |||||||
S6H-51-SI-SIC-370-L | 2" 6H-SI | 0°/4°±0.5° | 370±25um | D | * | L/L | >75% |
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