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Home > News > Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers
Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers

 Nitride-based diodes with an in situ grown, 30 nm thick unactivated Mg-doped GaN cap layer were fabricated. It was found that we could significantly reduce leakage current by using the semi-insulating Mg-doped GaN cap layer. This is due to the thicker and higher potential barrier and the effective passivation of surface states when the semi-insulating Mg-doped GaN cap layer was inserted.

source: iopscience

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