Polishing Wafer

Model NO.:intanetcms000049
Polishing Wafer
FEATURE

PAM-XIAMEN offers polished silicon carbide wafers,Flatness and surface quality are very crucial requirements of leading edge  applications. Therefore, surface defects are removed in a chemical-mechanical polishing process.

The result is an extremlely flat wafer with a mirror-like surface.

 4" 4H Silicon Carbide
Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area
　           N-Type 
S4H-100-N-SIC-350-A 4" 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90%
S4H-100-N-SIC-350-B 4" 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85%
S4H-100-N-SIC-350-D 4" 4H-N 0°/4°±0.5° 350±25um D  <100/cm2   P/P >75%
S4H-100-N-SIC-370-L 4" 4H-N 0°/4°±0.5° 370±25um D * L/L >75%
S4H-100-N-SIC-440-AC 4" 4H-N 0°/4°±0.5° 440±25um D * As-cut >75%
S4H-100-N-SIC-C0510-AC-D 4" 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2   As-cut *
S4H-100-N-SIC-C1015-AC-C 4" 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2   As-cut *
3" 4H Silicon Carbide
Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area
　          N-Type 
S4H-76-N-SIC-350-A 3" 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90%
S4H-76-N-SIC-350-B 3" 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85%
S4H-76-N-SIC-350-D 3" 4H-N 0°/4°±0.5° 350±25um D  <100/cm2   P/P >75%
S4H-76-N-SIC-370-L 3" 4H-N 0°/4°±0.5° 370±25um D * L/L >75%
S4H-76-N-SIC-410-AC 3" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75%
S4H-76-N-SIC-C0510-AC-D 3" 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2   As-cut *
S4H-76-N-SIC-C1015-AC-D 3" 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2   As-cut *
S4H-76-N-SIC-C0510-AC-C 3" 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2   As-cut *
S4H-76-N-SIC-C1015-AC-C 3" 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2   As-cut *
　 SEMI-INSULATING 
S4H-76-SI-SIC-350-A 3" 4H-SI 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90%
S4H-76-SI-SIC-350-B 3" 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85%
S4H-76-SI-SIC-350-D 3" 4H-SI 0°/4°±0.5° 350±25um D  <100/cm2   P/P >75%
2" 4H Silicon Carbide
Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area
　 N-Type 
S4H-51-N-SIC-330-A 2" 4H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90%
S4H-51-N-SIC-330-B 2" 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85%
S4H-51-N-SIC-330-D 2" 4H-N 0°/4°±0.5° 330±25um D  <100/cm2   C/P >75%
S4H-51-N-SIC-370-L 2" 4H-N 0°/4°±0.5° 370±25um D * L/L >75%
S4H-51-N-SIC-410-AC 2" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75%
S4H-51-N-SIC-C0510-AC-D 2" 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2   As-cut *
S4H-51-N-SIC-C1015-AC-D 2" 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2   As-cut *
S4H-51-N-SIC-C0510-AC-C 2" 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2   As-cut *
S4H-51-N-SIC-C1015-AC-C 2" 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2   As-cut *
2" 6H Silicon Carbide
Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area
　 N-Type 
S6H-51-N-SIC-330-A 2" 6H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90%
S6H-51-N-SIC-330-B 2" 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85%
S6H-51-N-SIC-330-D 2" 6H-N 0°/4°±0.5° 330±25um D  <100/cm2   C/P >75%
S6H-51-N-SIC-370-L 2" 6H-N 0°/4°±0.5° 370±25um D * L/L >75%
S6H-51-N-SIC-410-AC 2" 6H-N 0°/4°±0.5° 410±25um D * As-cut >75%
S6H-51-N-SIC-C0510-AC-D 2" 6H-N 0°/4°±0.5° 5~10mm D  <100/cm2   As-cut *
S6H-51-N-SIC-C1015-AC-D 2" 6H-N 0°/4°±0.5° 10~15mm D  <100/cm2   As-cut *
S6H-51-N-SIC-C0510-AC-C 2" 6H-N 0°/4°±0.5° 5~10mm C  <50/cm2   As-cut *
S6H-51-N-SIC-C1015-AC-C 2" 6H-N 0°/4°±0.5° 10~15mm C  <50/cm2   As-cut *
　 SEMI-INSULATING 
S6H-51-SI-SIC-330-A 2" 6H-SI 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90%
S6H-51-SI-SIC-330-B 2" 6H-SI 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85%
S6H-51-SI-SIC-330-D 2" 6H-SI 0°/4°±0.5° 330±25um D  <100/cm2   C/P >75%
S6H-51-SI-SIC-370-L 2" 6H-SI 0°/4°±0.5° 370±25um D * L/L >75%
S6H-51-SI-SIC-410-AC 2" 6H-SI 0°/4°±0.5° 410±25um D * As-cut >75%
S6H-51-SI-SIC-C0510-AC-D 2" 6H-SI 0°/4°±0.5° 5~10mm D  <100/cm2   As-cut *
S6H-51-SI-SIC-C1015-AC-D 2" 6H-SI 0°/4°±0.5° 10~15mm D  <100/cm2   As-cut *


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