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Home > News > Silicon carbide particles induced thermoelectric enhancement in SnSeS crystal
Silicon carbide particles induced thermoelectric enhancement in SnSeS crystal

 Solid-state thermoelectric composites consisting of promising SnSeS and SiC ceramic particles were fabricated, and their thermoelectric properties were examined. The SiC particles were randomly distributed into the SnSeS matrix, leading to the formation of the SiC/SnSeS composites. The introduction of SiC particles to the SnSeS improved the power factor which is mainly due to the effective enhancement of the Seebeck coefficient arising from the formation of phonon-scattering centers. Consequently, a maximum power factor of 215 µW m−1 K−2 was obtained for the composite with a SiC content of 1 wt.% which was greater than that of the pristine SnSeS. This result indicated that the introduction of SiC particles to the SnSeS is an efficient route to achieve high performance for widespread applications.


source: iopscience


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